Emergent Materials & Devices Laboratory

차세대 소재 소자 연구실

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차세대 소재 소자 연구실

울산과기원 차세대 소재 소자 연구실에서는 전자/광전자 응용을 위한 신물질 및 신개념 소자에 대한 연구를 수행하고 있다. 특히, 광밴드갭 반도체, 산화물 박막, 그래핀의 기초 물성 연구 및 이들 물질들을 기반으로 한 비휘발성 메모리, 고전력/고주파 반도체 소자, 양자컴퓨팅 소자 등의 개발에 중점을 두고 연구 활동을 진행하고 있다.
Emergent Materials & Devices Lab (EMDL) at UNIST is dedicated to exploring emergent (new) materials and device structures for electronic/optoelectronic applications. In particular, the group focuses on investigating the fundamental material properties of wide band-gap semiconductors, functional metal oxide thin films, and graphene, and also developing novel devices based on these materials such as non-volatile memory, high-power and high-frequency semiconductor devices, and quantum computing devices.

Major research field

Semiconductor, Metal Oxide Thin Film, Graphene, Non-Volatile Memory, Quantum Transport and Devices

Desired field of research

Scalable Quantum Computing System, New Type of CMOS Devices

Research Keywords and Topics

광밴드갭 반도체: SiC 전계효과트랜지스터, 질화물 고속트랜지스터, 그래핀 에피막
Wide Band Gap Semiconductor: SiC MOSFET, Nitride HEMT, Epitaxial Graphene on SiC
금속 산화물 박막: 게이트 절연막, 강유전체 메모리, 저항기억소자
Metal Oxide Thin Films: Advanced Gate Stack, Ferroelectric RAM, Memristive Devices
계면 전하/스핀 수송: 계면 탄동 수송, 양자전도
Interface Charge/Spin Transport: Ballistic Transport across Interface, Quantum Transport
양자컴퓨팅: 확장형 초전도체 및 반도체 큐비트 시스템
Quantum Computation: Scalable Superconductor & Semiconductor Qubit System

Research Publications
MORE

"Negative Fermi-Level Pinning Effect of Metal/n-GaAs(001) Junction induced by a Graphene Interlayer", Hoon Hahn Yoon, Wonho Song, Sungchul Jung, Junhyung Kim, Kyuhyung Mo, Gahyun Choi, Hu Young Jeong, Jong Hoon Lee, and Kibog Park*, ACS Applied Materials & Interfaces 11(50), 47182 (2019)
"Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer", Hoon Hahn Yoon, Sungchul Jung, Gahyun Choi, Junhyung Kim, Youngeun Jeon, Yong Soo Kim, Hu Young Jeong, Kwanpyo Kim, Soon-Yong Kwon, and Kibog Park*, Nano Letters 17(1), 44 (2017)
"Enhanced Crystallinity of Epitaxial Graphene Grown on Hexagonal SiC Surface with Molybdenum Plate Capping", Han Byul Jin, Youngeun Jeon, Sungchul Jung, Vijayakumar Modepalli, Hyun Suk Kang, Byung Cheol Lee, Jae-Hyeon Ko, Hyung-Joon Shin, Jung-Woo Yoo, Sung Youb Kim, Soon-Yong Kwon, Daejin Eom, and Kibog Park*, Scientific Reports 5, 9615 (2015)

Patents

"Touch sensor and display device including the same", Jae Ik Lim, Won Sang Park, Hye Yong Chu, Kibog Park, Sungchul Jung, Hanbyul Jin, US 10627965 B2 (04/21/2020)
"Ferroelectric memory device and method for manufacturing the same", Kibog Park, Soon-Yong Kwon, Youngeun Jeon, Sungchul Jung, Han Byul Jin, Jinsung Kwak, Korea No 10-1385735 (04/09/2014)

국가과학기술표준분류

  • NB. 물리학
  • NB06. 응집물질물리
  • NB0607. 반도체

국가기술지도분류

  • 정보-지식-지능화 사회 구현
  • 010400. 반도체/나노 신소자 기술

녹색기술분류

  • 고효율화기술
  • 전력효율성 향상
  • 324. 전력 IT기술

6T분류

  • NT 분야
  • 나노소자 및 시스템
  • 030111. 나노전자 소자기술