Frontier, Innovative Nanomaterials and Devices (FIND) Laboratory

첨단혁신 나노 소재 및 소자 연구실

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FIND 연구실은 혁신적인 전자 및 에너지 소자 구현을 위해, 원자 수준 제어를 통한 저차원 나노소재 설계 및 합성 연구를 진행한다. 세부적으로는, 차세대 로직 및 메모리 반도체 소자 개발을 위한 대면적 2D 반도체/금속 합성 및 전극 기술을 연구하며, 수소 생성 및 배터리 등에 적용가능한 전기화학적 셀 연구와 중성자/방사선 차폐용 층상형 코팅 소재 연구를 수행한다.
“Semiconductor Epitaxy, van der Waals Epitaxy, Functional Nanocoating, Phase Change Memory Materials, 0D/1D/2D Functional Nanomaterials” for Potential Applications in Flexible Optoelectronics, Photovoltaics, and Environmental & Energy Devices
- Novel Synthesis and Applications of One-, Two-Dimensional van der Waals Atomic Crystals beyond Graphene, and Hybrid Systems with MOVPE-grown III-V & II-VI Compound Semiconductors for Flexible Optoelectronics, Photovoltaics, and Environmental & Energy Devices
- Low-Dimensional Nano- materials for Multi-Functional Coatings and Interfaces (e.g., Coating for hetero-epitaxy, for oxidation/corrosion/diffusion/gas barriers, for bio-scaffolds, for membranes etc.)
- Advanced III-V & II-VI Epitaxy(with reduced dimensionalities) on Si via Metal-Organic Chemical Vapor Deposition(MOCVD) for Advanced Optoelectronics/Photovoltaics and Flexible RBG & White Light Emitters

Major research field

Epitaxy, Nanocoating, Thin Film Technology & Surface/Interface Science

Desired field of research

Research Keywords and Topics

• 화합물 반도체 / 광전자 재료 · 소자 / 금속 유기 화학 기상 증착 (MOCVD)
Compound Semiconductors / Optoelectronic Materials·Devices / Metal-Organic Chemical Vapor Deposition (MOCVD)
• 0D / 1D / 2D van der Waals (단일 / 미소 원자 층) 금속 · 반도체 · 절연체
0D / 1D / 2D van der Waals (single/few-atomic-layer) Metals·Semiconductors·Insulators
• 상 변화 기억 재료, (유연) 전극 재료
Phase Change Memory Materials, (Flexible) Electrode Materials

Research Publications

• NATURE COMMUNICATIONS / Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length / Song, S.; Yoon, A.; Ha, J.-K.; Yang, J.; Jang. S.; Leblanc, C.; Wang, J.; Sim, Y.; Jariwala, D.; Min, S.-K.; Lee, Z.; Kwon, S.-Y. / 2022-08
• NATURE ELECTRONICS / Integrating 2D materials and metal electrodes / Kwon, S.-Y. / 2022-05
• NATURE ELECTRONICS / Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal-semiconductor contacts at the Schottky-Mott limit / Song, S.; Sim, Y.; Kim, S.-Y.; Hwa, J.; Oh, I.; Na, W.; Lee, D. H.; Wang, J.; Yan, S.i; Liu, Y.; Kwak, J.; Chen, J.- H.; Cheong, H.; Yoo, J.-W.; Lee, Z.; Kwon, S.-Y. / 2020-04
• ADVANCED MATERIALS / Recent developments in controlled vapor-phase growth of 2D group 6 transition metal dichalcogenides / Kim, S.-Y.; Kwak, J.; Ciobanu, C. V.; Kwon, S.-Y. / 2019-02


• Method for manufacturing graphene, transparent electrode and active layer comprising the same, and display, electronic device, optoelectronic device, battery, solar cell, and dye-sensitized solar cell including the electrode and the active layer / 권순용,곽진성,윤의준,박기복 / 2015-09


  • EB. 재료
  • EB01. 금속재료
  • EB0102. 기능재료