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Our lab investigates strongly correlated electron phenomena such as superconductivity, quantum magnetism, Mott insulators, quantum ferroelectrics, quantum Hall effects, and multiferroics. These phenomena arise from the interactions between electron spin, charge, orbitals, and phonons. We study these phenomena through controlled phase transitions by manipulating temperature, magnetic field, pressure, and chemical doping. The ideal states of studying condensed matter lie in growing the highest quality single crystals in the world. By using extreme conditions to induce phase transitions, such as ultra-low temperatures (1.8 Kelvin + 50 mK) and ultra-high magnetic fields (14 Tesla or 60 Tesla), we control quantum states to understand their physical mechanisms. The fundamental understanding of condensed matter obtained through our research is applied to developing new semiconductor materials, artificial intelligent semiconductor/synaptic materials, and quantum materials.
Major research field
Multiferroics, Novel Quantum Magnet, Ferroelectric, Single Crystal Growth, Superconductor, Next-generation Wafer Materials
Desired field of research
New Quantum Materials, Quantum Physical Properties, High-quality Single-crystal Growth, Single-crystal Substrate Processing Technology
Research Keywords and Topics
· Multiferroics & Quantum Magnet: Magnetoelectric Coupling, Spin Transport, Spin Hall Effect
· Ferroelectrics
· Cryogenic Experiment under Extreme Environment: High Magnetic Field, High Pressure
· Single Crystal Growth: Transition Metal Oxides, Intermetallic Compounds
Research Publications
MORE· Advanced Functional Materials "Polar Perturbations in Functional Oxide Heterostructures" (2023).
· Advanced Materials "Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square‐tensile‐strain" (2022).
· Physical Review B "Unconventional critical behavior in the quasi-one-dimensional S = 1 chain NiTe2O5" (2019).
· Nature Materials "Experimental demonstration of hybrid improper ferroelectricity and the presence of abundant charged walls in (Ca,Sr)3Ti2O7 crystals" (2015)
· Nature Communications "Non-hysteretic colossal magnetoelectricity in a collinear antiferromagnet" (2014).
Patents
· 국내특허: “바륨지르코늄 산화물을 이용한 단결정 잉곳 및 그 제조 방법”, 등록번호: 10-2092358
· PCT: “Single Crystal Ingot Using Barium Zirconium Oxide and Preparation Method Therefor”, 출원번호: PCT/KR2019/006502
· US Patent: “Single Crystal Ingot Using Barium Zirconium Oxide and Preparation Method Therefor”, 출원번호: 16/979369
국가과학기술표준분류
- NB. 물리학
- NB06. 응집물질물리
국가기술지도분류
- 정보-지식-지능화 사회 구현
- 010400. 반도체/나노 신소자 기술
녹색기술분류
- 고효율화기술
- 전력효율성 향상
- 323. 그린 IT기술
6T분류
- IT 분야
- 핵심부품
- 010114. 고밀도 정보저장장치 기술